| PART |
Description |
Maker |
| DF15005S DF1501S |
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS SINGLE-PHASE GLASS BRIDGE
|
PACELEADER INDUSTRIAL
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| MSB20A |
GLASS PASSIVATED SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS
|
HY ELECTRONIC CORP.
|
| S10GBU80-C S10GBU40-C S10GBU20-C S10GBU60-C S10GBU |
Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers
10.0Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
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| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
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VISAY[Vishay Siliconix]
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| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 |
200 V, 1.5 A Avalanche glass passivated bridge rectifier
900 V, 1.5 A Avalanche glass passivated bridge rectifier
600 V, 1.5 A Avalanche glass passivated bridge rectifier
100 V, 1.5 A Avalanche glass passivated bridge rectifier
|
EIC discrete Semiconductors
|
| RU2GGF RU2JGF RU2AGF RU2BGF RU2DGF |
Ultra Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
(RU2AGF - RU2JGF) SINTERED GLASS JUNCTION
|
Gulf Semiconductor
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| GDZJ3.0 GDZJ4.3 GDZJ2.7 GDZJ2.0 GDZJ2.2 GDZJ2.4 GD |
5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
AXIAL LEAD ZENER DIODES
|
Pan Jit International I...
Rohm Co., Ltd.
Diodes, Inc.
NXP Semiconductors N.V.
Pan Jit International Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
